Room-temperature vertical-cavity surface-emitting lasers at 4 μm with GaSb-based type-II quantum wells

被引:46
|
作者
Veerabathran, G. K. [1 ]
Sprengel, S. [1 ]
Andrejew, A. [1 ]
Amann, M. -C. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany
关键词
ABSORPTION; MODEL;
D O I
10.1063/1.4975813
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report electrically pumped lambda = 4 mu m vertical-cavity surface-emitting lasers (VCSELs) that significantly extend the wavelength range covered with electrically pumped VCSELs into the mid infrared. A single stage active region with eight type-II quantum wells provides sufficient gain, while lateral current confinement and waveguiding are accomplished with the proven buried tunnel junction technology. These devices operate in continuous wave (CW) up to -7 degrees C and in pulsed operation up to 45 degrees C. Their CW threshold pump power levels are below 10 mW at temperatures well accessible by thermo-electric cooling, and their maximum single-mode output power is around 0.18 mW. Single-mode operation with side-mode suppression ratio of more than 20 dB and a continuous electro-thermal tuning range as large as 19.2 nm are achieved. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells
    Sprengel, Stephan
    Veerabathran, Ganpath Kumar
    Federer, Florian
    Andrejew, Alexander
    Amann, Markus-Christian
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) : 453 - 461
  • [2] GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm
    Andrejew, Alexander
    Sprengel, Stephan
    Amann, Markus-Christian
    OPTICS LETTERS, 2016, 41 (12) : 2799 - 2802
  • [3] Simulation and optimization of 2.6-2.8 μm GaSb-based vertical-cavity surface-emitting lasers
    Piskorski, L.
    Marciniak, M.
    Walczak, J.
    2016 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2016, : 135 - 136
  • [4] Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers
    Sanchez, Dorian
    Cerutti, Laurent
    Tournie, Eric
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (49)
  • [5] GaSb vertical-cavity surface-emitting lasers for type 1.5 μm range
    Koeth, J
    Dietrich, R
    Forchel, A
    APPLIED PHYSICS LETTERS, 1998, 72 (13) : 1638 - 1640
  • [6] Comprehensive anaylsis of GaSb-based Mid-infrared Vertical-Cavity Surface-Emitting Lasers
    Li, Z. Q.
    Li, Z. M. Simon
    VERTICAL-CAVITY SURFACE-EMITTING LASERS XVII, 2013, 8639
  • [7] Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers
    Anan, T
    Yamada, M
    Tokutome, K
    Sugou, S
    Nishi, K
    Kamei, A
    ELECTRONICS LETTERS, 1999, 35 (11) : 903 - 904
  • [8] Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
    Optical Interconnection NEC Lab., RWCP, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
    不详
    Electron. Lett., 11 (903-904):
  • [9] Mode characteristics of vertical-cavity surface-emitting lasers based on GaAs quantum wells
    Haisler, VA
    Derebezov, IA
    CAOL 2005: PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1, 2005, : 237 - 239
  • [10] Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers
    Shang, Jingzhi
    Cong, Chunxiao
    Wang, Zilong
    Peimyoo, Namphung
    Wu, Lishu
    Zou, Chenji
    Chen, Yu
    Chin, Xin Yu
    Wang, Jianpu
    Soci, Cesare
    Huang, Wei
    Yu, Ting
    NATURE COMMUNICATIONS, 2017, 8