Room-temperature vertical-cavity surface-emitting lasers at 4 μm with GaSb-based type-II quantum wells

被引:46
|
作者
Veerabathran, G. K. [1 ]
Sprengel, S. [1 ]
Andrejew, A. [1 ]
Amann, M. -C. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany
关键词
ABSORPTION; MODEL;
D O I
10.1063/1.4975813
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report electrically pumped lambda = 4 mu m vertical-cavity surface-emitting lasers (VCSELs) that significantly extend the wavelength range covered with electrically pumped VCSELs into the mid infrared. A single stage active region with eight type-II quantum wells provides sufficient gain, while lateral current confinement and waveguiding are accomplished with the proven buried tunnel junction technology. These devices operate in continuous wave (CW) up to -7 degrees C and in pulsed operation up to 45 degrees C. Their CW threshold pump power levels are below 10 mW at temperatures well accessible by thermo-electric cooling, and their maximum single-mode output power is around 0.18 mW. Single-mode operation with side-mode suppression ratio of more than 20 dB and a continuous electro-thermal tuning range as large as 19.2 nm are achieved. Published by AIP Publishing.
引用
收藏
页数:5
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