Modeling and Optimization of Smoothly Tapered Junction Termination Extension for High-Voltage SiC BJTs and Thyristors by Simulation

被引：1
|
作者：
Long, Hu [1 ,2 ]
Huang, Linyang [1 ,2 ]
Shao, Fangge [1 ,2 ]
Ren, Na [1 ,2 ]
Sheng, Kuang [1 ,2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期
关键词：
Silicon carbide; Junctions; Thyristors; Doping; Semiconductor process modeling; Optimization; Impact ionization; Edge termination; high voltage; power devices; silicon carbide (SiC); PIN DIODES; 1 CM(2); KV; DESIGN; TRENCH;
D O I：
10.1109/TED.2021.3130855
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on a newly proposed edge termination technique on silicon carbide (SiC) device named aperture density modulation (ADM), this article investigates the optimization strategy of a family of termination structures derived from it. Using both analytical modeling and numerical simulation, this article demonstrates the capability of achieving 15-kV breakdown voltage with a termination length of 160-240 mu in theory. Besides, the fabrication feasibility with profile customizability is also demonstrated in experiments while still keeping a low process cost.
引用
收藏
页码：1169 / 1175
页数：7
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