Modeling and Optimization of Smoothly Tapered Junction Termination Extension for High-Voltage SiC BJTs and Thyristors by Simulation

被引：1
|
作者：
Long, Hu [1 ,2 ]
Huang, Linyang [1 ,2 ]
Shao, Fangge [1 ,2 ]
Ren, Na [1 ,2 ]
Sheng, Kuang [1 ,2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期
关键词：
Silicon carbide; Junctions; Thyristors; Doping; Semiconductor process modeling; Optimization; Impact ionization; Edge termination; high voltage; power devices; silicon carbide (SiC); PIN DIODES; 1 CM(2); KV; DESIGN; TRENCH;
D O I：
10.1109/TED.2021.3130855
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on a newly proposed edge termination technique on silicon carbide (SiC) device named aperture density modulation (ADM), this article investigates the optimization strategy of a family of termination structures derived from it. Using both analytical modeling and numerical simulation, this article demonstrates the capability of achieving 15-kV breakdown voltage with a termination length of 160-240 mu in theory. Besides, the fabrication feasibility with profile customizability is also demonstrated in experiments while still keeping a low process cost.
引用
收藏
页码：1169 / 1175
页数：7
相关论文
共 50 条
  • [21] Application of BEM to high-voltage junction termination
    Wu, ZL
    Gao, YM
    Luo, JS
    Hou, X
    Chen, GF
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2001, 20 (10) : 1218 - 1225
  • [22] Study of the Turn-on of Various High-Voltage SiC Thyristors
    O'Brien, Heather
    Ogunniyi, Aderinto
    Shaheen, William
    Ryu, Sei-Hyung
    WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 5 - 9
  • [23] Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)
    Ronsisvalle, C.
    Enea, V.
    MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) : 1773 - 1777
  • [24] High-voltage implanted-emitter 4H-SiC BJTs
    Tang, Y
    Fedison, JB
    Chow, TP
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) : 16 - 18
  • [25] Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices
    Tongtong Yang
    Song Bai
    Runhua Huang
    Journal of Semiconductors, 2017, (04) : 49 - 54
  • [26] High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
    Zhang, Jianhui
    Zhao, Jian H.
    Wang, Xiaohui
    Li, Xueqing
    Fursin, Leonid
    Alexandrov, Petre
    Gagliardi, Mari-Anne
    Lange, Mike
    Dries, Chris
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 710 - +
  • [27] Current gain of 4H-SiC high-voltage BJTs at reduced temperatures
    Ivanov, P. A.
    Levinshtein, M. E.
    Palmour, J. W.
    Agarwal, A. K.
    Krishnaswami, S.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) : 613 - 615
  • [28] EVOLUTION OF JUNCTION TERMINATION TECHNIQUES FOR HIGH-VOLTAGE INTEGRATED DEVICES
    SANCHEZ, JL
    CHARITAT, G
    ONDE ELECTRIQUE, 1992, 72 (04): : 30 - 36
  • [29] REALIZATION OF A HIGH-VOLTAGE PLANAR JUNCTION TERMINATION FOR POWER DEVICES
    SCHULZE, HJ
    KUHNERT, R
    SOLID-STATE ELECTRONICS, 1989, 32 (02) : 175 - 176
  • [30] Ultralow Angle Bevel-Etched Junction Termination Extension for High Voltage SiC Power Devices
    Zhou, Kun
    Li, Lianghui
    Li, Zhiqiang
    Xu, Xinliang
    Zhang, Lin
    Gao, Lei
    Cui, Yinxin
    Zhang, Long
    Yang, Yingkun
    Zhou, Yang
    Li, Juntao
    Dai, Gang
    2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018,
12345