Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo-Si-N Coating during Magnetron Sputtering

被引:6
|
作者
Lim, Ki Seong [1 ]
Kim, Young Seok [1 ]
Hong, Sung Hwan [1 ]
Song, Gian [2 ]
Kim, Ki Buem [1 ]
机构
[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, HMC, 209 Neungdong Ro, Seoul 05006, South Korea
[2] Kongju Natl Univ, Div Adv Mat Engn, Cheonan 330717, Chungnam, South Korea
基金
新加坡国家研究基金会;
关键词
Mo-Si-N; sputtering; amorphous coating; density; hardness; NITRIDE THIN-FILMS; MECHANICAL-PROPERTIES; MOLYBDENUM NITRIDE; SUBSTRATE-TEMPERATURE; OXIDATION RESISTANCE; PHYSICAL-PROPERTIES; DEPOSITED MO; INDENTATION; EVOLUTION; BEHAVIOR;
D O I
10.3390/coatings10010034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, Mo-Si-N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N-2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo-Si-N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N-2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N-2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo-Si-N coating. For the amorphous Mo-Si-N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.
引用
收藏
页数:11
相关论文
共 50 条
  • [41] XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering
    M. Baseer Haider
    Nanoscale Research Letters, 2017, 12
  • [42] Effect of N2 gas pressure ratio and DC bias on formation of iron nitride thin film by RF sputtering method
    Seki, Takahiro
    Niizuma, Kiyozumi
    IEEJ Transactions on Fundamentals and Materials, 2014, 134 (01) : 47 - 52
  • [43] XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering
    Haider, M. Baseer
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [44] Structure and properties of TiAlLaN coatings deposited at various Ar/N2 flow ratio using a mid-frequency magnetron sputtering system
    Du, Hao
    Zhao, Haibo
    Xiong, Ji
    Wang, Linlin
    Xian, Guang
    RESEARCH IN MATERIALS AND MANUFACTURING TECHNOLOGIES, PTS 1-3, 2014, 835-836 : 629 - +
  • [45] Effect of N2 flow rate on the properties of N doped TiO2 films deposited by DC coupled RF magnetron sputtering
    Peng, Shou
    Yang, Yong
    Li, Gang
    Jiang, Jiwen
    Jin, Kewu
    Yao, TingTing
    Zhang, Kuanxiang
    Cao, Xin
    Wang, Yun
    Xu, Genbao
    Journal of Alloys and Compounds, 2016, 678 : 355 - 359
  • [46] Formation of amorphous carbon nitride films by reactive Ar/N2 high-power impulse magnetron sputtering
    Kimura, Takashi
    Nishimura, Ryotaro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (01)
  • [47] Effect of N2 flow rate on the properties of N doped TiO2 films deposited by DC coupled RF magnetron sputtering
    Peng, Shou
    Yang, Yong
    Li, Gang
    Jiang, Jiwen
    Jin, Kewu
    Yao, TingTing
    Zhang, Kuanxiang
    Cao, Xin
    Wang, Yun
    Xu, Genbao
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 678 : 355 - 359
  • [48] Growth of Thin AlN Films on Si Wafers by Reactive Magnetron Sputtering: Role of Processing Pressure, Magnetron Power and Nitrogen/Argon Gas Flow Ratio
    Sandager, Matilde Kammer
    Kjelde, Christian
    Popok, Vladimir
    CRYSTALS, 2022, 12 (10)
  • [49] Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering
    Vijayakumar, Arun
    Todi, Ravi M.
    Warren, Andrew P.
    Sundaram, Kalpathy B.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (06) : 944 - 948
  • [50] Effect of N2 partial pressure on the microstructure and texture of MgO films deposited by rf-magnetron sputtering
    Chen, S. C.
    Ku, P. C.
    Shen, C. L.
    Fang, Y. H.
    Huang, K. T.
    Lin, G. P.
    Hong, W. H.
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES, PTS 1 AND 2, 2008, 47-50 : 588 - +