A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices

被引:293
|
作者
Chin, Hui Shun [1 ]
Cheong, Kuan Yew [1 ]
Ismail, Ahmad Badri [1 ]
机构
[1] Univ Sains Malaysia, Energy Efficient & Sustainable Semicond Res Grp, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
关键词
THIN-FILM COUPLES; LEAD-FREE SOLDERS; SILICON-CARBIDE; SILVER-PASTE; SEMICONDUCTOR; ELECTRONICS; AU; INTERCONNECTS; ENVIRONMENTS; RELIABILITY;
D O I
10.1007/s11663-010-9365-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, high-temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down-hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide-based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 A degrees C). Future challenges and prospects related to high-temperature die attach materials also are proposed at the end of this article.
引用
收藏
页码:824 / 832
页数:9
相关论文
共 50 条
  • [41] SiC-based ceramics with remarkable electrical conductivity prepared by ultrafast high-temperature sintering
    Li, Hong Wei
    Zhao, Yi Peng
    Chen, Guo Qing
    Li, Ming Hao
    Wei, Zhi Fan
    Fu, Xue Song
    Zhou, Wen Long
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2023, 43 (05) : 2269 - 2274
  • [42] Experimental study of SiC-based ablation products in high-temperature plasma-jets
    Funatsu, M.
    Shirai, H.
    SHOCK WAVES, VOL 1, PROCEEDINGS, 2009, : 445 - +
  • [43] Thermal reliability of Cu sintering joints for high-temperature die attach
    Son, Junhyuk
    Yu, Dong-Yurl
    Kim, Yun-Chan
    Kim, Shin-Il
    Byun, Dongjin
    Bang, Junghwan
    MICROELECTRONICS RELIABILITY, 2023, 147
  • [44] Study of Baseplate Materials for High-Temperature Operation of SiC Power Modules
    Koui, Kenichi
    Kato, Fumiki
    Tanisawa, Hidekazu
    Sato, Shinji
    Murakami, Yoshinori
    Sato, Hiroshi
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8, 2018, 86 (12): : 99 - 105
  • [45] SiC Power Device Die Attach for Extreme Environments
    Shen, Zhenzhen
    Johnson, R. Wayne
    Hamilton, Michael C.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) : 346 - 353
  • [46] SiC-based power converters
    Tolbert, Leon
    Zhang, Hui
    Ozpineci, Burak
    Chinthavali, Madhu S.
    SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 221 - +
  • [47] Thermal management of high power LEDs: Impact of die attach materials
    You, J. P.
    He, Y.
    Shi, F. G.
    2007 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 239 - 242
  • [48] SiC-based current limiter devices
    Chante, JP
    Tournier, D
    Planson, D
    Raynaud, C
    Lazar, M
    Locatelli, ML
    Brosselard, P
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 951 - 956
  • [49] Effect of Aging and Thermal Shock on the Reliability of Silver Sintered Die Attach for SiC Power Devices
    Osaka University, Flexible 3D System Integration Laboratory, Mihogaoka 8-1, Osaka, Ibaraki
    567-0047, Japan
    不详
    530-0011, Japan
    Int. Conf. Electron. Packag., ICEP, 2023, (141-142):
  • [50] Flexible and high-temperature resistant ZrO2/SiC-based nanofiber membranes for high temperature thermal insulation
    Zhang, Baojie
    Tong, Zongwei
    Yu, Huijun
    Xu, Hui
    Chen, Zhiwei
    Li, Xiaolei
    Ji, Huiming
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 872