In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

Carbon doping in AlxGa1-xAs was achieved using different approaches. The moderate growth temperature of 650 degrees C was employed to grow C bulk-doped AlxGa1-xAs with a high Al mole fraction. The hole-density was altered using different V/III ratios. The trimethylaluminum (TMAl) was used as an effective C delta-doping precursor for growth of C delta-doped pipi doping superlattices in AlxGa1-xAs. The average hole-density of C delta-doped pipi superlattices was greater than 2-3 x 10(19) cm(-3). Zn-free GRINSCH In0.2Ga0.8As/GaAs laser structures were then grown using the C bulk-doped AlxGa1-xAs and C delta-doped pipi superlattice as a cladding and ohmic contact layer, respectively. The ridge waveguide laser diodes were fabricated and characterized to verify flexibility of these two doping approaches for device structures.