In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

被引：0

作者：

Li, G ^{[1
]}

Yuan, S

Tan, HH

Liu, XQ

Chua, SJ

Jagadish, C

机构：

[1] Australian Natl Univ, Inst Adv Studies, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Inst Mat Res & Engn, Singapore 119260, Singapore

[3] Acad Sinica, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 09期

关键词：

delta-doping; carbon doped; InGaAs/GaAs; metalorganic vapor phase epitaxy (MOVPE); single quantum well laser;

D O I：

10.1007/s11664-998-0165-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon doping in AlxGa1-xAs was achieved using different approaches. The moderate growth temperature of 650 degrees C was employed to grow C bulk-doped AlxGa1-xAs with a high Al mole fraction. The hole-density was altered using different V/III ratios. The trimethylaluminum (TMAl) was used as an effective C delta-doping precursor for growth of C delta-doped pipi doping superlattices in AlxGa1-xAs. The average hole-density of C delta-doped pipi superlattices was greater than 2-3 x 10(19) cm(-3). Zn-free GRINSCH In0.2Ga0.8As/GaAs laser structures were then grown using the C bulk-doped AlxGa1-xAs and C delta-doped pipi superlattice as a cladding and ohmic contact layer, respectively. The ridge waveguide laser diodes were fabricated and characterized to verify flexibility of these two doping approaches for device structures.

引用

页码：L61 / L63

页数：3

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