In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

被引：0
|
作者：
Li, G [1 ]
Yuan, S
Tan, HH
Liu, XQ
Chua, SJ
Jagadish, C
机构：
[1] Australian Natl Univ, Inst Adv Studies, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Inst Mat Res & Engn, Singapore 119260, Singapore
[3] Acad Sinica, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 09期
关键词：
delta-doping; carbon doped; InGaAs/GaAs; metalorganic vapor phase epitaxy (MOVPE); single quantum well laser;
D O I：
10.1007/s11664-998-0165-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carbon doping in AlxGa1-xAs was achieved using different approaches. The moderate growth temperature of 650 degrees C was employed to grow C bulk-doped AlxGa1-xAs with a high Al mole fraction. The hole-density was altered using different V/III ratios. The trimethylaluminum (TMAl) was used as an effective C delta-doping precursor for growth of C delta-doped pipi doping superlattices in AlxGa1-xAs. The average hole-density of C delta-doped pipi superlattices was greater than 2-3 x 10(19) cm(-3). Zn-free GRINSCH In0.2Ga0.8As/GaAs laser structures were then grown using the C bulk-doped AlxGa1-xAs and C delta-doped pipi superlattice as a cladding and ohmic contact layer, respectively. The ridge waveguide laser diodes were fabricated and characterized to verify flexibility of these two doping approaches for device structures.
引用
收藏
页码：L61 / L63
页数：3
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