Effect of Y doping on microstructure and thermophysical properties of yttria stabilized hafnia ceramics

被引:34
|
作者
Li, Chun [1 ]
Ma, Yue [1 ]
Xue, Zhaolu [1 ]
Yang, Yonghong [2 ]
Chen, Jianhua [2 ]
Guo, Hongbo [1 ]
机构
[1] Beihang Univ BUAA, Sch Mat Sci & Engn, Beijing Key Lab Adv Funct Mat & Thin Film Technol, 37 Xueyuan Rd, Beijing 100191, Peoples R China
[2] Xian Aerosp Prop Inst, Xian Natl Civil Aerosp Ind Base, 289 Fei Tian Rd, Xian 71000, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Yttria stabilized hafnia (YSH); Phase stability; Microstructure; Thermophysical properties; THERMAL BARRIER COATINGS; EB-PVD; SOLID-SOLUTIONS; CONDUCTIVITY; ZIRCONIA; EXPANSION; BEHAVIOR;
D O I
10.1016/j.ceramint.2018.07.030
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A series of Y2O3-doped HfO2 ceramics (Hf1-xYxO2-0.5x, x = 0, 0.04, 0.08, 0.12, 0.16 and 0.2) were synthesized by solid-state reaction at 1600 degrees C. The microstructure, thermophysical properties and phase stability were investigated. Hf1-xYxO2-0.5x ceramics were comprised of monoclinic (M) phase and cubic (C) phase when Y3+ ion concentration ranged from 0.04 to 0.16. The thermal conductivity of Hf1-xYxO2-0.5x ceramic decreased as Y3+ ion concentration increased and Hf0.8Y0.2O1.9 ceramic revealed the lowest thermal conductivity of similar to 1.8 W/m*K at 1200 degrees C. The average thermal expansion coefficient (TEC) of Hf1-xYxO2-0.5x between 200 degrees C and 1300 degrees C increased with the Y3+ ion concentration. Hf0.8Y0.2O1.9 yielded the highest TEC of similar to 10.4 x 10(-6) K-1 while keeping good phase stability between room temperature and 1600 degrees C.
引用
收藏
页码:18213 / 18221
页数:9
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