Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy

被引：18

作者：

Fuyuki, Takuma ^{[1
]}

Kashiyama, Shota ^{[1
]}

Tominaga, Yoriko ^{[1
]}

Oe, Kunishige ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

基金：

日本学术振兴会;

关键词：

GAAS; DEFECT; IDENTIFICATION; DEPENDENCE;

D O I：

10.1143/JJAP.50.080203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy measurements reveal deep-hole traps with activation energies of 0.43 and 0.23 eV in p-type GaAs1-xBix samples with x = 1.2 and 3.4%, respectively, grown at 370 degrees C by molecular beam epitaxy. In spite of low-temperature growth, the deep-level trap concentration is suppressed on the order of 10(15) cm(-3), suggesting that Bi atoms contribute to the enhancement of migration to prevent the formation of point defects. The possible origin of the hole traps is discussed in connection with arsenic antisite, As-Ga, and bismuth antisite, Bi-Ga. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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