Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy

被引：18

作者：

Fuyuki, Takuma ^{[1
]}

Kashiyama, Shota ^{[1
]}

Tominaga, Yoriko ^{[1
]}

Oe, Kunishige ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

基金：

日本学术振兴会;

关键词：

GAAS; DEFECT; IDENTIFICATION; DEPENDENCE;

D O I：

10.1143/JJAP.50.080203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy measurements reveal deep-hole traps with activation energies of 0.43 and 0.23 eV in p-type GaAs1-xBix samples with x = 1.2 and 3.4%, respectively, grown at 370 degrees C by molecular beam epitaxy. In spite of low-temperature growth, the deep-level trap concentration is suppressed on the order of 10(15) cm(-3), suggesting that Bi atoms contribute to the enhancement of migration to prevent the formation of point defects. The possible origin of the hole traps is discussed in connection with arsenic antisite, As-Ga, and bismuth antisite, Bi-Ga. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[31] Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
Sun, J. W.
Lu, Y. M.
Liu, Y. C.
Shen, D. Z.
Zhang, Z. Z.
Li, B. H.
Zhang, J. Y.
Yao, B.
Zhao, D. X.
Fan, X. W.
APPLIED PHYSICS LETTERS, 2006, 89 (23)
[32] MINORITY ELECTRON LIFETIMES IN HEAVILY DOPED P-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ITO, H
FURUTA, T
ISHIBASHI, T
APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2936 - 2938
[33] P-type doping of beryllium chalcogenides grown by molecular beam epitaxy
Lugauer, HJ
Litz, T
Fischer, F
Waag, A
Gerhard, T
Zehnder, U
Ossau, W
Landwehr, G
JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 619 - 623
[34] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
Look, DC
Reynolds, DC
Litton, CW
Jones, RL
Eason, DB
Cantwell, G
APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1830 - 1832
[35] Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy
Armstrong, A.
Poblenz, C.
Mishra, U. K.
Speck, J. S.
Ringel, S. A.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06): : 1867 - 1871
[36] Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant
Lamas, TE
Quivy, AA
Martini, S
da Silva, MJ
Leite, JR
THIN SOLID FILMS, 2005, 474 (1-2) : 25 - 30
[37] Heavily carbon-doped P-type GaAs grown on GaAs substrates with various orientations by metalorganic molecular beam epitaxy
Guo, LQ
Konagai, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B): : L195 - L197
[38] Heavily carbon-doped p-type GaAs grown on GaAs substrates with various orientations by metalorganic molecular beam epitaxy
Guo, Li-Qi
Konagai, Makoto
Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (2 B):
[39] DEEP HOLE TRAPS IN VPE P-TYPE INP
INUISHI, M
WESSELS, BW
ELECTRONICS LETTERS, 1981, 17 (19) : 685 - 686
[40] Li-doped p-type ZnS grown by molecular beam epitaxy
Ichino, K
Matsuki, Y
Lee, ST
Nishikawa, T
Kitagawa, M
Kobayashi, H
11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 710 - 713

← 1 2 3 4 5 →