Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application

被引：3
|
作者：
Li, HX [1 ]
Li, CB
He, YJ
Liu, GR
Chen, YS
Duan, SZ
机构：
[1] Shandong Teachers Univ, Inst Semicond, Jinan 250014, Peoples R China
[2] Univ Sci & Technol Beijing, Dept Chem Phys, Beijing 100083, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 83卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
oxygen precipitates; silicon; NTD; denuded zone;
D O I：
10.1016/S0921-5107(01)00502-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxygen precipitates in the floating-zone silicon in hydrogen ambience [FZ(H) Si] and in the neutron transmutation doping (NTD) FZ(H) Si were investigated by infrared (IR) spectroscopy at room temperature. In the intermediate temperature range, 600-850 degreesC. the apparent activation energies of 1.4 and 1.2 eV were derived from Arrhenius plots of the product of the absorbance at 1230 cm (1) and the half-peak breadth for the formation of oxygen precipitates in the FZ(H) Si and in the NTD FZ(H) Si, respectively. The high temperature stability of the oxygen precipitates was only in the NTD FZ(H) Si. A denuded zone was obtained by denuding annealing and precipitating annealing the NTD FZ(H) Si wafers. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：106 / 110
页数：5
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