Oxygen-isotope-doped silicon crystals grown by a floating zone method

被引：0
|
作者：
Kakimoto, Koichi
Tanahashi, Katsuto
Yamada-Kaneta, Hiroshi
Nagasawa, Tohru
机构：
[1] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan
[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[3] NEC Machinery Corp, Kusatsu 5258511, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期
关键词：
floating zone; single crystal growth; isotope oxygen; semiconductor silicon;
D O I：
10.1016/j.jcrysgro.2007.03.015
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have grown silicon single crystals doped with isotope oxygen of 180 by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 180 was doped from the gas phase with argon gas during crystal growth. The isotope of 180 was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 180 from the gas phase through a liquid-gas interface. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：310 / 312
页数：3
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