Resistive transition in π-junction superconductors -: art. no. 012503

被引:12
|
作者
Granato, E [1 ]
机构
[1] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12201970 Sao Paulo, Brazil
关键词
D O I
10.1103/PhysRevB.69.012503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The resistivity behavior of inhomogeneous superconductors with random pi junctions, as in high-T-c materials with d-wave symmetry, is studied by numerical simulation of a three-dimensional XY spin-glass model. Above a concentration threshold of antiferromagnetic couplings, a resistive transition is found in the chiral-glass phase at finite temperatures and the critical exponents are determined from dynamic scaling analysis. The power-law exponent for the nonlinear contribution found in recent resistivity measurements is determined by the dynamic critical exponent of this transition.
引用
收藏
页数:4
相关论文
共 50 条