Resistive transition in π-junction superconductors -: art. no. 012503

被引：12
|
作者：
Granato, E [1 ]
机构：
[1] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12201970 Sao Paulo, Brazil
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 01期
关键词：
D O I：
10.1103/PhysRevB.69.012503
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The resistivity behavior of inhomogeneous superconductors with random pi junctions, as in high-T-c materials with d-wave symmetry, is studied by numerical simulation of a three-dimensional XY spin-glass model. Above a concentration threshold of antiferromagnetic couplings, a resistive transition is found in the chiral-glass phase at finite temperatures and the critical exponents are determined from dynamic scaling analysis. The power-law exponent for the nonlinear contribution found in recent resistivity measurements is determined by the dynamic critical exponent of this transition.
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