Resistive transition in π-junction superconductors -: art. no. 012503

被引：12

作者：

Granato, E ^{[1
]}

机构：

[1] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12201970 Sao Paulo, Brazil

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.69.012503

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistivity behavior of inhomogeneous superconductors with random pi junctions, as in high-T-c materials with d-wave symmetry, is studied by numerical simulation of a three-dimensional XY spin-glass model. Above a concentration threshold of antiferromagnetic couplings, a resistive transition is found in the chiral-glass phase at finite temperatures and the critical exponents are determined from dynamic scaling analysis. The power-law exponent for the nonlinear contribution found in recent resistivity measurements is determined by the dynamic critical exponent of this transition.

引用

页数：4

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