Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage

被引:5
|
作者
Wei, Jia-nan [1 ]
Guo, Hong-xia [2 ,3 ]
Zhang, Feng-qi [3 ]
He, Chao-hui [1 ]
Ju, An-an [2 ]
Li, Yong-hong [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Shaanxi, Peoples R China
[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
[3] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, Xian 710024, Shaanxi, Peoples R China
基金
美国国家科学基金会;
关键词
Ferroelectric random access memory; Single event effect; Transient micro-latch-up; Neutron irradiation; LATCH-UP; IRRADIATION; PREVENTION;
D O I
10.1016/j.microrel.2018.12.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The single event effects (SEE) in commercial Ferroelectric Random Access Memory (FRAM) were investigated using heavy-ion and pulsed laser. Stable data upsets affecting one to several rows and transient data upsets affecting hundreds to even thousands of rows were both observed, and the corresponding sensitive regions were identified. Further research provides evidence that the transient micro-latch-up event in the peripheral circuits based on complementary metal oxide semiconductor (CMOS) process is a main cause of the transient data upsets. Moreover, neutron irradiation is performed in order to mitigate the upsets caused by transient micro-latch-up. Due to the reduction of the current gains of the parasitic bipolar transistors by neutron-induced displacement damage, transient micro-latch-up as well as the resulting data upsets was suppressed.
引用
收藏
页码:149 / 154
页数:6
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