Review of neutron induced single event effects on semiconductor devices

被引：0
|
作者：
Yang, Shanchao [1 ]
Qi, Chao [1 ]
Liu, Yan [1 ]
Guo, Xiaoqiang [1 ]
Jin, Xiaoming [1 ]
Chen, Wei [1 ]
Bai, Xiaoyan [1 ]
Lin, Dongsheng [1 ]
Wang, Guizhen [1 ]
Wang, Chenhui [1 ]
Li, Bin [1 ]
机构：
[1] State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, (Northwest Institute of Nuclear Technology), Xi'an, China
来源：
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2015年 / 27卷 / 11期
关键词：
D O I：
10.11884/HPLPB201527.110201
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学科分类号：
摘要：
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