Growth and structural, optical and electrical properties study of bulk GaN

被引：1
|
作者：
Gogova, D. [1 ,2 ]
Rudko, G. [3 ]
Siche, D. [1 ]
机构：
[1] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany
[2] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BG-1784 Sofia, Bulgaria
[3] V Lashkarev Inst Semicondct Phys, UA-03028 Kiev, Ukraine
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词：
GaN; optical properties; photoluminescence; electrical properties; impurity levels; LAYERS;
D O I：
10.1002/pssc.201100799
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-quality GaN substrates with a thickness of 0.5 to 1.2 mm were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. Structural, optical and electrical properties of the grown material were studied in detail. Resistivity and doping concentrations dependence on temperature were investigated and the results revealed a low donor concentration (2x10(15) cm(-3) at 273 K) and a moderate resistivity (10-48 Omega cm) of the samples. Several deep levels observed in the DLTS spectra were identified. The study shows that the GaN material is self-compensated and a strong influence of point defects related to dislocations on electronic transport is observed. The HVPE growth on InGaN/GaN multi-quantum wells buffer layers and subsequent self-separation method was seen as advantageous, in comparison to the laser-induced lift-off one, in respect to a lower cost and better crystalline quality of the GaN material obtained. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1048 / 1052
页数：5
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