Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

被引：0
|
作者：
Polyakov, A.Y. [1 ,2 ]
Smirnov, N.B. [1 ,3 ]
Yakimov, E.B. [4 ]
Usikov, A.S. [5 ,6 ]
Helava, H. [5 ]
Shcherbachev, K.D. [2 ]
Govorkov, A.V. [3 ]
Makarov, Yu N. [5 ]
Lee, In-Hwan [2 ]
机构：
[1] National University of Science and Technology, MISiS, Moscow, Russia
[2] School of Advanced Materials Engineering, Research Center of Advanced Materials Development, Chonbuk National University, Jeonju, Korea, Republic of
[3] Institute of Rare Metals, Moscow, Russia
[4] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, Chernogolovka, Russia
[5] Nitride Crystals, Inc., Deer Park, United States
[6] Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint-Petersburg, Russia
来源：
Journal of Alloys and Compounds | 2014年 / 617卷
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页码：200 / 206
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