Ferromagnetic tunnel junctions with high thermal stability

被引：1
|
作者：
Ando, Y.
Iura, S.
Kubota, H.
Miyazaki, T.
Yoon, C. S.
Lee, J. H.
Im, D. H.
Kim, C. K.
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
tunnel junction; TMR; interface; thermal stability;
D O I：
10.1016/j.jmmm.2003.12.314
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The junctions exposed to pure oxygen at the interface between the bottom CoFe layer and Al-oxide insulator were prepared. The junctions showed high thermal stability of tunnel magnetoresistance (TMR) ratio up to 375 degrees C in comparison with the standard junction oxidized with plasma. Auger electron spectroscopy (AES) profiles revealed that the Mn diffusion occurred even for the junction with high thermal stability after annealing over 375 degrees C. A large amount of oxygen existing at the interface might oxidize the Mn diffusing at the interface. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码：E1507 / E1509
页数：3
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