Ferromagnetic tunnel junctions with high thermal stability

被引：1
|
作者：
Ando, Y.
Iura, S.
Kubota, H.
Miyazaki, T.
Yoon, C. S.
Lee, J. H.
Im, D. H.
Kim, C. K.
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
tunnel junction; TMR; interface; thermal stability;
D O I：
10.1016/j.jmmm.2003.12.314
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The junctions exposed to pure oxygen at the interface between the bottom CoFe layer and Al-oxide insulator were prepared. The junctions showed high thermal stability of tunnel magnetoresistance (TMR) ratio up to 375 degrees C in comparison with the standard junction oxidized with plasma. Auger electron spectroscopy (AES) profiles revealed that the Mn diffusion occurred even for the junction with high thermal stability after annealing over 375 degrees C. A large amount of oxygen existing at the interface might oxidize the Mn diffusing at the interface. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码：E1507 / E1509
页数：3
相关论文
共 50 条
  • [11] Tunnel magnetoresistance of ferromagnetic semiconductor junctions
    Honda, S.
    Itoh, H.
    Inoue, J.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (12): : 4456 - 4459
  • [12] Noise properties of ferromagnetic tunnel junctions
    Nowak, ER
    Merithew, RD
    Weissman, MB
    Bloom, I
    Parkin, SSP
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6195 - 6201
  • [13] ac transport in ferromagnetic tunnel junctions
    Chui, ST
    Hu, LB
    APPLIED PHYSICS LETTERS, 2002, 80 (02) : 273 - 275
  • [14] Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions
    Volvach, I.
    Alzate, J. G.
    Chen, Y. -J.
    Smith, A. J.
    Kencke, D. L.
    Lomakin, V.
    APPLIED PHYSICS LETTERS, 2020, 116 (19)
  • [15] Influence of Ta antidiffusion barriers on the thermal stability of tunnel junctions
    Cardoso, S
    Ferreira, R
    Freitas, PP
    Wei, P
    Soares, JC
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3792 - 3794
  • [16] MAGNETIC TUNNEL JUNCTIONS WITH IMPROVED TMR RESPONSE AND THERMAL STABILITY
    Urse, M.
    Chiriac, H.
    Grigoras, M.
    Borza, F.
    CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2009, : 171 - 174
  • [17] Effects of randomness on tunnel conductance and magnetoresistance in ferromagnetic tunnel junctions
    Itoh, H
    Shibata, A
    Kumazaki, T
    Inoue, J
    Maekawa, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1999, 68 (05) : 1632 - 1639
  • [18] Canted magnetization texture in ferromagnetic tunnel junctions
    Kuzmenko, Igor
    Fal'ko, Vladimir
    PHYSICAL REVIEW B, 2008, 78 (18)
  • [19] Effects of interface oxidization in ferromagnetic tunnel junctions
    Sato, M
    Kikuchi, H
    Kobayashi, K
    IEEE TRANSACTIONS ON MAGNETICS, 1999, 35 (05) : 2946 - 2948
  • [20] Numerical study of magnetoresistance in ferromagnetic tunnel junctions
    Itoh, H
    Kumazaki, T
    Inoue, J
    Maekawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10): : 5554 - 5559
12345