Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

被引：18

作者：

Hellenbrand, Markus ^{[1
]}

Memisevic, Elvedin ^{[1
]}

Berg, Martin ^{[1
,2
]}

Kilpi, Olli-Pekka ^{[1
]}

Svensson, Johannes ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, SE-22100 Lund, Sweden

[2] Spallacatch AB, SE-21120 Malmo, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 11期

基金：

瑞典研究理事会;

关键词：

Vertical nanowires; III-V; MOSFET; TFET; low-frequency noise;

D O I：

10.1109/LED.2017.2757538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed analysis of lowfrequency noise (LFN) measurements in vertical III-V nanowire tunnel field-effect transistors (TFETs), which help to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junctionwithout deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/ decade for a constant LFN level.

引用

页码：1520 / 1523

页数：4

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