Low-Frequency Dispersion and State Dependency in Modern Microwave III-V HEMTs

被引：0

作者：

van Raay, Friedbert ^{[1
]}

Schwantuschke, Dirk ^{[1
]}

Leuther, Arnulf ^{[1
]}

Brueckner, Peter ^{[1
]}

Peschel, Detlef ^{[1
]}

Quay, Ruediger ^{[1
]}

Schlechtweg, Michael ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

2018 11TH GERMAN MICROWAVE CONFERENCE (GEMIC 2018) | 2018年

关键词：

HEMT modeling; trapping effects; low-frequency dispersion; state modeling; model verification; ALGAN/GAN HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlGaN/GaN HEMT- and an InAlAs/InGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. low-frequency dispersion and state dependency vs. average gate and drain voltages. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows both effects, while the mHEMT is nearly free of state dependency. A new formulation of the recently proposed integral transform large-signal FET model is capable of describing both effects in pulsed-RF and even in CW load-pull operation conditions.

引用

页码：168 / 171

页数：4

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