Low-Frequency Dispersion and State Dependency in Modern Microwave III-V HEMTs

被引：0

作者：

van Raay, Friedbert ^{[1
]}

Schwantuschke, Dirk ^{[1
]}

Leuther, Arnulf ^{[1
]}

Brueckner, Peter ^{[1
]}

Peschel, Detlef ^{[1
]}

Quay, Ruediger ^{[1
]}

Schlechtweg, Michael ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

2018 11TH GERMAN MICROWAVE CONFERENCE (GEMIC 2018) | 2018年

关键词：

HEMT modeling; trapping effects; low-frequency dispersion; state modeling; model verification; ALGAN/GAN HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlGaN/GaN HEMT- and an InAlAs/InGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. low-frequency dispersion and state dependency vs. average gate and drain voltages. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows both effects, while the mHEMT is nearly free of state dependency. A new formulation of the recently proposed integral transform large-signal FET model is capable of describing both effects in pulsed-RF and even in CW load-pull operation conditions.

引用

页码：168 / 171

页数：4

共 50 条

[41] Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs
Kruppa, W
Boos, JB
Bennett, BR
Yang, MJ
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 569 - 572
[42] Nonlinear Steady-State III-V FET Model for Microwave Antenna Switch Applications
Takatani, Shinichiro
Chen, Cheng-Duan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) : 4301 - 4308
[43] Plasticity of III-V compounds at low temperatures
Suzuki, T
Yasutomi, T
Tokuoka, T
Yonenaga, I
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 171 (01): : 47 - 52
[44] DETERMINATION OF DISPERSION OF OUTPUT CONDUCTANCE AND TRANSCONDUCTANCE OF INP HEMTS USING LOW-FREQUENCY S-PARAMETER MEASUREMENTS
KLEPSER, BUH
PATRICK, W
ELECTRONICS LETTERS, 1995, 31 (15) : 1294 - 1295
[45] TRAP STUDIES IN GAINP GAAS AND ALGAAS GAAS HEMTS BY MEANS OF LOW-FREQUENCY NOISE AND TRANSCONDUCTANCE DISPERSION CHARACTERIZATIONS
CHAN, YJ
PAVLIDIS, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 637 - 642
[46] Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs
Kruppa, W.
Boos, J.B.
Bennett, B.R.
Yang, M.J.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 569 - 572
[47] HIGH T-c SUPERCONDUCTOR AND III-V SOLID STATE MICROWAVE HYBRID CIRCUITS
Shen, Z-Y.
Pang, P.
Wilker, C.
Laubacher, D. B.
Holstein, W. L.
Carter, C. F., III
Adlerstein, M.
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1993, 3 (01) : 2832 - 2835
[48] Low-frequency noise characteristics of AlGaAs/InGaAs pseudomorphic HEMTs
Mizutani, T
Yamamoto, M
Kishimoto, S
Maezawa, K
IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (10): : 1318 - 1322
[49] Low-frequency noise characteristics of AlGaAs/InGaAs pseudomorphic HEMTs
Mizutani, T.
Yamamoto, M.
Kishimoto, S.
Maezawa, K.
IEICE Transactions on Electronics, 2001, E84-C (10) : 1318 - 1322
[50] REFRACTIVE INDEX DISPERSION IN IV AND III-V SEMICONDUCTORS.
Campi, D.
Papuzza, C.
CSELT Technical Reports, 1985, 13 (02): : 121 - 127

← 1 2 3 4 5 →