Intrinsic effective piezoelectric coefficient e31,f for ferroelectric thin films -: art. no. 152901

被引：27
|
作者：
Ouyang, J [1 ]
Ramesh, R [1 ]
Roytburd, AL [1 ]
机构：
[1] Univ Maryland, Dept Mat Sci & Engn, Mat Res & Sci Engn Ctr, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1899252
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
As a function of film orientation, the intrinsic effective piezoelectric coefficient e(31,f) is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb(ZrxTi1-x)O-3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e(31,f) are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e(31,f) is about -30 C/m(2) on the rhombohedral side of the morphotropic phase boundary. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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