Intrinsic effective piezoelectric coefficient e31,f for ferroelectric thin films -: art. no. 152901

被引：27
|
作者：
Ouyang, J [1 ]
Ramesh, R [1 ]
Roytburd, AL [1 ]
机构：
[1] Univ Maryland, Dept Mat Sci & Engn, Mat Res & Sci Engn Ctr, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1899252
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
As a function of film orientation, the intrinsic effective piezoelectric coefficient e(31,f) is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb(ZrxTi1-x)O-3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e(31,f) are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e(31,f) is about -30 C/m(2) on the rhombohedral side of the morphotropic phase boundary. (C) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [1] Effective transverse piezoelectric coefficient e31,f of (100)/(001) textured PZT thin films
    Ceramics Laboratory, Swiss Fed. Institute of Technology, CH-1015 Lausanne, Switzerland
    Integr Ferroelectr, 1 (13-18):
  • [2] Effective transverse piezoelectric coefficient e31,f of (100)/(001) textured PZT thin films
    Ledermann, N
    Seifert, A
    Hiboux, S
    Muralt, P
    INTEGRATED FERROELECTRICS, 1999, 24 (1-4) : 13 - 18
  • [3] Dual-Ring Method: Lateral Piezoelectric Coefficient (e31,f) Measurement on Unstructured Thin Films
    Burssens, Jan-Willem
    van der Wiel, Appo
    Kraft, Michael
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2023, 72
  • [4] Modified free vibrating beam method for characterization of effective e31 coefficient and leakage resistance of piezoelectric thin films
    Defay, Emmanuel
    Zinck, Christophe
    Malhaire, Christophe
    Baboux, Nicolas
    Barbier, Daniel
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (10):
  • [5] Tensile and Compressive stress dependency of the transverse (e31,f) piezoelectric coefficient of PZT thin films for MEMS devices
    Prume, Klaus
    Muralt, Paul
    Schmitz-Kempen, Thorsten
    Tiedke, Stephan
    BEHAVIOR AND MECHANICS OF MULTIFUNCTIONAL AND COMPOSITE MATERIALS 2007, 2007, 6526
  • [6] Evaluation of the e31 piezoelectric constant for PZT thin films
    Cattan, E
    Velu, G
    Tronc, P
    Remiens, D
    Thierry, B
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1997, 22 (08): : 669 - 674
  • [7] Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films
    Dubois, MA
    Muralt, P
    SENSORS AND ACTUATORS A-PHYSICAL, 1999, 77 (02) : 106 - 112
  • [8] Probing domain switching dynamics in ferroelectric thick films by small field e31,f piezoelectric measurement
    Cheng, Hongbo
    Ouyang, Jun
    Kanno, Isaku
    APPLIED PHYSICS LETTERS, 2017, 111 (02)
  • [9] The field induced e31,f piezoelectric and Rayleigh response in barium strontium titanate thin films
    Garten, L. M.
    Trolier-McKinstry, S.
    APPLIED PHYSICS LETTERS, 2014, 105 (13)
  • [10] e31 piezoelectric constant measurement of lead zirconate titanate thin films
    Lab. des Mat. Avances Ceramiques, Univ. Valenciennes Hainaut-Cambresis, ZI Champ de l'Abbesse, 59600 Maubeuge, France
    J Appl Phys, 12 (7017-7023):
12345