Design of an X-Band GaAs MMIC Doherty Amplifier accounting for device RON resistance

被引：0
|
作者：
Piazzon, Luca [1 ]
Colantonio, Paolo [1 ]
Giannini, Franco [1 ]
Giofre, Rocco [1 ]
机构：
[1] Univ Roma Tor Vergata, Elect Engn Dept, Via Politecn 1, I-00133 Rome, Italy
来源：
40TH EUROPEAN MICROWAVE CONFERENCE | 2010年
关键词：
POWER-AMPLIFIERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This contribution focus on the role played by the active device ON-resistance in the load modulation phenomena occurring in a Doherty power amplifier (DPA). This issue is analyzed from both theoretical and experimental point of view. The former demonstrates that to properly account for the ONresistance of the Main device, a simultaneous optimization of the Auxiliary amplifier is mandatory to properly optimize the DPA performances. The theoretical results have been experimentally confirmed by presenting the design of two MMIC DPAs in GaAs technology, based on neither standard or advanced proposed approach. Both DPAs are designed to operate at X-Band (9.5GHz), showing an output power of 30dBm, while, in the overall range of 6 dB of output power back off (OBO), the achieved efficiency is no lower than 30%.
引用
收藏
页码：862 / 865
页数：4
相关论文
共 50 条
  • [21] A High-efficiency 3-Watt GaAs pHEMT X-band MMIC Power Amplifier
    Hua, Yunan
    Wu, Haifeng
    Liao, Xuejie
    Liao, Chengjv
    Hu, Liulin
    Lv, Jiping
    2018 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT2018), 2018,
  • [22] X-band MMIC low-noise amplifier based on 0.15 μm GaAs pHEMT technology
    Mokerov, V. G.
    Gunter, V. Ya
    Arzhanov, S. N.
    Fedorov, Yu, V
    Scherbakova, M. Yu
    Babak, L., I
    Barov, A. A.
    Cherkashin, M., V
    Sheherman, F., I
    KPBIMUKO 2007CRIMICO: 17TH INTERNATIONAL CRIMEAN CONFERENCE ON MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2007, : 77 - +
  • [23] X-Band High-Efficiency GaAs MMIC PA
    Pereira, Aaron
    Parker, Anthony
    Heimlich, Michael
    Weste, Neil
    Quay, Ruediger
    Carrubba, Vincenzo
    2014 IEEE 15TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2014,
  • [24] X-Band Self Biased MMIC Amplifier using 250nm GaAs pHEMT process
    Paul, Tuhin
    Harinath, Mynam
    Garg, S. K.
    2017 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2017, : 32 - 34
  • [25] Low cost X-Band power amplifier MMIC fabricated on a 0.25μm GaAs pHEMT process
    Bösch, W
    Mayock, JGE
    O'Keefe, MF
    McMonagle, J
    2005 IEEE International Radar, Conference Record, 2005, : 22 - 26
  • [26] Invited: X-band GaAs MMIC size reduction and integration
    Griffin, EL
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 709 - 712
  • [27] K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver
    Quaglia, Roberto
    Camarchia, Vittorio
    Jiang, Tao
    Pirola, Marco
    Guerrieri, Simona Donati
    Loran, Brian
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (11) : 2518 - 2525
  • [28] Visual design of X-Band two-stage MMIC low-noise amplifier
    Babak, L. I.
    Cherkashin, M. V.
    Sheherman, F. I.
    Barov, A. A.
    KPBIMUKO 2007CRIMICO: 17TH INTERNATIONAL CRIMEAN CONFERENCE ON MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2007, : 101 - +
  • [29] X-Band GaAs Stacked-FET Amplifier
    Niven, David J.
    Mahon, Simon J.
    Heimlich, Michael C.
    2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2021, : 115 - 117
  • [30] X-BAND MIC GAAS IMPATT AMPLIFIER MODULE
    TSERNG, HQ
    MCQUIDDY, DN
    WISSEMAN, WR
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (01) : 32 - 39
12345