Invited: X-band GaAs MMIC size reduction and integration

被引：0
|
作者：
Griffin, EL [1 ]
机构：
[1] MA COM, Roanoke, VA USA
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes efforts at ITT to develop cost effective GaAs X-Band MMICs. The ITT MSAG(R) GaAs MMIC process is first described. A brief discussion on the merits of chip integration, is followed by a discussion of the ITT338510D commercial 12-Watt MMIC, and the ITT373504D commercial control chip (phase shifter, attenuator, driver, digital control) with emphasis on our efforts to reduce chip area.
引用
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页码：709 / 712
页数：4
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