Subgap optical absorption in amorphous Ge-Sb-se thin films

被引：0
|
作者：
Madhusoodanan, KN [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Instrumentat, Cochin 682022, Kerala, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical absorption measurements in thin films of semiconducting amorphous chalcogenide samples GexSb5 Se95-x and GexSb10Se90-x have been carried out in the subgap region using photothermal deflection spectrscopy. Composition dependence of optical energy gap, inverse logarithmic slope and absorption due to gap states were deduced from the measurements. The results are discussed in view of the changes in the network structure as the composition is varied.
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页码：1211 / 1214
页数：4
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