Ge-Sb-Se AMORPHOUS CHALCOGENIDE BASED PLASMONIC PLANAR WAVEGUIDES FOR OPTICAL MEMORIES APPLICATIONS

被引：0
|
作者：
Vasile, Georgiana C. [1 ]
Stafe, Mihai [1 ]
Popescu, Aurelian [2 ]
Savastru, Dan [2 ]
Tenciu, Daniel [2 ]
Negutu, Constantin [1 ]
Puscas, Niculae N. [1 ]
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest, Romania
[2] INOE 2000, Natl Inst R&D Optoelect, Magurele, Ilfov, Romania
来源：
UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN-SERIES A-APPLIED MATHEMATICS AND PHYSICS | 2021年 / 83卷 / 04期
关键词：
plasmonics; surface plasmon resonance; amorphous chalcogenide materials;
D O I：
暂无
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
This paper presents a theoretical analysis of Ge28.1Sb6.3Se65.6 amorphous chalcogenide glass planar waveguides for optical memories applications. Also, surface plasmon resonance in Kretschmann configuration is studied for a multilayer configuration containing an amorphous chalcogenide film of Ge28.1Sb6.3Se65.6. The resonance curves of plasmonic structure containing Metal-Dielectric interface deposited on thermal oxidized silicon were investigated numerically. The reflectivity curves demonstrate sharp and very narrow plasmonic resonance with full-width half-maximum (FWHM) of 0.43 divided by 0.85 degrees. Simulations could be used for the design of optical memory devices.
引用
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页码：275 / 284
页数：10
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