CNT FET with asymmetric contact shows single electron transistor characteristics at low temperature

被引：0
|
作者：
Gowtham, M.
机构：
来源：
MRS BULLETIN | 2008年 / 33卷 / 03期
关键词：
D O I：
10.1557/mrs2008.39
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：166 / 166
页数：1
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