Characteristics of three-junction electromechanical single electron transistor at zero temperature

被引：4
|
作者：
Wang, Y [1 ]
Jiang, JF [1 ]
Cai, QY [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Inst Micro & Nanosci & Technol, Shanghai 200030, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 31卷 / 01期
关键词：
single electron tunneling; nano-electromechanical device; three-junction;
D O I：
10.1016/j.physe.2005.09.007
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the single electron transistor, multiple-junction devices have different properties with two-junction devices. We investigate a model system of three-junclion electromechanical single electron transistor at zero temperature. Comparing with two-junction electromechanical single electron transistor, the island movement has a greater influence on the electron tunneling. The current-drain voltage (I-DS-V-D) curve also has Coulomb Staircase phenomena. However, the conductance decreases with the increase of VG. A simple and effective method is applied to estimate the trend of the current curves, by analyzing the average electrostatic forces. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：53 / 56
页数：4
相关论文
共 50 条
  • [1] Diffusion-based electron thermometry using a three-junction single-electron transistor
    Swenson, L. J.
    Wood, D. K.
    Cleland, A. N.
    NANO LETTERS, 2007, 7 (06) : 1804 - 1808
  • [2] Effect of cross capacitance in three-junction single-electron transistors
    Kim, J
    Oh, S
    Park, JW
    Lee, JO
    Kwon, HC
    Park, SI
    Kim, KT
    Yoo, KH
    Kim, JJ
    PHYSICAL REVIEW B, 1999, 59 (03) : 1629 - 1632
  • [3] Operation of a three-junction single-electron pump with on-chip resistors
    Lotkhov, SV
    Bogoslovsky, SA
    Zorin, AB
    Niemeyer, J
    APPLIED PHYSICS LETTERS, 2001, 78 (07) : 946 - 948
  • [4] Effect of temperature on electrical characteristics of single electron transistor
    Deyasi, Arpan
    Sarkar, Angsuman
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2019, 25 (05): : 1875 - 1880
  • [5] Effect of temperature on electrical characteristics of single electron transistor
    Arpan Deyasi
    Angsuman Sarkar
    Microsystem Technologies, 2019, 25 : 1875 - 1880
  • [6] Electromechanical single electron transistor in strong dissipative structure
    Wang, Y
    Jiang, JF
    Cai, QY
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 30 (1-2): : 59 - 63
  • [7] Three-Junction Bandgap Circuit with Sub 1 ppm/°C Temperature Coefficient
    Ebenezer, Pallavi Sugantha
    Naganadhan, Vijayalakshmi
    Chen, Degang
    Geiger, Randall
    2020 IEEE 63RD INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2020, : 305 - 308
  • [8] Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation
    Qi Lei
    Zhang Rongzhu
    ACTA OPTICA SINICA, 2020, 40 (05)
  • [9] Study of a nano electromechanical single electron transistor with numerical methods
    Nishiguchi, Norihiko
    STATISTICAL AND CONDENSED MATTER PHYSICS: OVER THE HORIZON, 2007, : 173 - 185
  • [10] Influence of oxidation temperature on Si-single electron transistor characteristics
    Namatsu, H
    Watanabe, Y
    Yamazaki, K
    Yamaguchi, T
    Nagase, M
    Ono, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2869 - 2873
12345