Characteristics of three-junction electromechanical single electron transistor at zero temperature

被引：4

作者：

Wang, Y ^{[1
]}

Jiang, JF ^{[1
]}

Cai, QY ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Inst Micro & Nanosci & Technol, Shanghai 200030, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 31卷 / 01期

关键词：

single electron tunneling; nano-electromechanical device; three-junction;

D O I：

10.1016/j.physe.2005.09.007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the single electron transistor, multiple-junction devices have different properties with two-junction devices. We investigate a model system of three-junclion electromechanical single electron transistor at zero temperature. Comparing with two-junction electromechanical single electron transistor, the island movement has a greater influence on the electron tunneling. The current-drain voltage (I-DS-V-D) curve also has Coulomb Staircase phenomena. However, the conductance decreases with the increase of VG. A simple and effective method is applied to estimate the trend of the current curves, by analyzing the average electrostatic forces. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：53 / 56

页数：4

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