LOW-TEMPERATURE CHARACTERISTICS OF MOS SINGLE-TRANSISTOR MEMORY CELLS

被引：0

作者：

LINK, W

MAY, H

机构：

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 1979年 / 33卷 / 06期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：229 / 235

页数：7

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[1] SINGLE-TRANSISTOR CELL MAKES ROOM FOR MORE MEMORY ON AN MOS CHIP
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