Gate CD control considering variation of gate and STI structure

被引：0
|
作者：
Kurihara, Masaru [1 ]
Tanaka, Jun'ichi [1 ]
Izawa, Masaru [1 ]
Kawai, Kenji [2 ]
Fujiwara, Nobuo [2 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
[2] Renesas Technol Corp, Proc Dev Dept, Itami, Hyogo 6640005, Japan
来源：
ISSM 2006 CONFERENCE PROCEEDINGS- 13TH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING | 2006年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a fab-wide APC system to control critical dimension (CD) of gate electrode length. We have also developed a model equation to predict gate CD by considering the structures of gate electrode and STI. This prediction model was also used to do factor analysis of gate CD variation. Effectiveness of the prediction model for feedforward control was evaluated by both simulation and experiment.
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页码：95 / +
页数：2
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