Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique

被引:1
|
作者
Schenau, KV [1 ]
Vanoppen, P [1 ]
van der Laan, H [1 ]
Kiers, T [1 ]
Janssen, M [1 ]
机构
[1] ASML, NL-5504 DR Veldhoven, Netherlands
来源
Metrology, Inspection, and Process Control for Microlithography XIX, Pts 1-3 | 2005年 / 5752卷
关键词
optical lithography; 193nm; 65nm node; CDU; scatterometry; reticle measurements; SERUM;
D O I
10.1117/12.601500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Scatterometry was selected as CD metrology for the 65 nm CDU system qualification. Because of the dominant reticle residuals component in the 65 nm CD budget for dense lines, significant improvements in reticle CD metrology were required. SEM is an option but requires extensive measurements due to the scatterometry grating modules. Therefore a new technique was developed and called SERUM (Spot sensor Enabled Reticle Uniformity Measurements). It uses the on board exposure system metrology sensors to measure transmission that is converted to reticle CD. It has the advantage that an entire reticle is measured within two minutes with good repeatability. The reticle fingerprints correlate well to the SEM measurements. With the improvements in reticle CD metrology offered by SEM and SERUM the reticle residuals component no longer dominates the 65 nm budget for CDU system qualification.
引用
收藏
页码:1312 / 1322
页数:11
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