共 50 条
- [1] Spot sensor Enabled Reticle Uniformity Measurements for 65nm CDU analysis with scatterometry EMLC 2006: 22ND EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2006, 6281
- [2] Double dipole lithography for 65nm node and beyond: Defect sensitivity characterization and reticle inspection 24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 711 - 722
- [3] Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 801 - 812
- [4] Application of CPL with Interference Mapping Lithography™ to generate random contact reticle designs for the 65nm node PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI, 2004, 5446 : 550 - 559
- [5] Highly sensitive focus monitoring on production wafer by scatterometry measurements for 90/65nm node devices ISSM 2006 CONFERENCE PROCEEDINGS- 13TH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, 2006, : 130 - +
- [6] Measurement precision of CD-SEM for 65nm technology node METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 929 - 939
- [7] Shot number analysis at 65nm node mask writing using VSB writer PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 : 309 - 317
- [8] Failure analysis of 65nm technology node SRAM soft failure IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2008, : 150 - 153
- [9] Advanced gate CDU control in sub-28nm node using poly slot process by scatterometry metrology METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVII, 2013, 8681
- [10] Dual damascene formation technique using Nano-Clustering Silica (NCS) for 65nm node interconnects ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 97 - 102