MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

被引：0
|
作者：
Marso, M [1 ]
Bernát, J [1 ]
Javorka, P [1 ]
Fox, A [1 ]
Wolter, M [1 ]
Kordos, P [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
来源：
ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of a carrier supply layer on the electrical properties of MSM diodes based on AlGaN/GaN HEMT layer structures is investigated. The voltage dependence of the Schottky contact capacitance allows the use of the device as varactor diode with C-MAX/C-MIN ratios tip to 17, tuneable by contact geometry. The carrier supply doping determines the sheet carrier density of the two-dimensional electron gas channel, which is responsible for the transition voltage and the series resistance of the MSM diode. A device based on the highest doped layer structure shows a cutoff frequency as high as 65 GHz.
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页码：151 / 154
页数：4
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