MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

被引：0
|
作者：
Marso, M [1 ]
Bernát, J [1 ]
Javorka, P [1 ]
Fox, A [1 ]
Wolter, M [1 ]
Kordos, P [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
来源：
ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of a carrier supply layer on the electrical properties of MSM diodes based on AlGaN/GaN HEMT layer structures is investigated. The voltage dependence of the Schottky contact capacitance allows the use of the device as varactor diode with C-MAX/C-MIN ratios tip to 17, tuneable by contact geometry. The carrier supply doping determines the sheet carrier density of the two-dimensional electron gas channel, which is responsible for the transition voltage and the series resistance of the MSM diode. A device based on the highest doped layer structure shows a cutoff frequency as high as 65 GHz.
引用
收藏
页码：151 / 154
页数：4
相关论文
共 50 条
  • [21] Cascode connected AlGaN/GaN HEMT's on SiC substrates
    Green, BM
    Chu, KK
    Smart, JA
    Tilak, V
    Kim, H
    Shealy, JR
    Eastman, LF
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (08): : 316 - 318
  • [22] Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT
    Chatterjee, Upayan
    Pal, Ananya
    Kundu, Atanu
    Kar, Mousiki
    2020 IEEE CALCUTTA CONFERENCE (CALCON), 2020, : 426 - 430
  • [23] Effect of GaN cap layer on the electrical properties of AlGaN/GaN HEMT
    Guo, Han
    Tang, Wu
    Zhou, Wei
    Li, Chiming
    ADVANCED MATERIALS AND PROCESS TECHNOLOGY, PTS 1-3, 2012, 217-219 : 2393 - 2396
  • [24] Optimization AlGaN/GaN HEMT with Field Plate Structures
    Shi, Ningping
    Wang, Kejia
    Zhou, Bing
    Weng, Jiafu
    Cheng, Zhiyuan
    MICROMACHINES, 2022, 13 (05)
  • [25] Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer
    Ma Zhi-Yong
    Wang Xiao-Liang
    Hu Guo-Xin
    Ran Jun-Xue
    Xiao Hong-Ling
    Luo Wei-Jun
    Tang Jian
    Li Jian-Ping
    Li Jin-Min
    CHINESE PHYSICS LETTERS, 2007, 24 (06) : 1705 - 1708
  • [26] MOVPE GaN/AlGaN HEMT NANO-STRUCTURES
    Hulicius, Eduard
    Kuldova, Karla
    Hospodkova, Alice
    Pangrac, Jiri
    Dominec, Filip
    Humlicek, Josef
    Pelant, Ivan
    Cibulka, Ondrej
    Herynkova, Katerina
    10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R)), 2019, : 30 - 35
  • [27] A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor
    Kong, Cen
    Li, Hui
    Chen, Xiaojian
    Jiang, Shuwen
    Zhou, Jianjun
    Chen, Chen
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (11) : 3413 - 3419
  • [28] Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
    Linkohr, Stefanie
    Pletschen, Wilfried
    Polyakov, Vladimir
    Himmerlich, Marcel
    Lorenz, Pierre
    Krischok, Stefan
    Kirste, Lutz
    Mueller, Stefan
    Ambacher, Oliver
    Cimalla, Volker
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 1096 - 1098
  • [29] Etching of AlGaN/GaN HEMT structures by Cl2-based ICP
    Gao, Z.
    Romero, M. F.
    Calle, F.
    PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013), 2013, : 29 - 32
  • [30] Piezoelectric response of AlGaN/GaN-based circular-HEMT structures
    Lalinsky, T.
    Drzik, M.
    Vanko, G.
    Vallo, M.
    Kutis, V.
    Bruncko, J.
    Hascik, S.
    Jakovenko, J.
    Husak, M.
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2424 - 2426
12345