MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

被引：0
|
作者：
Marso, M [1 ]
Bernát, J [1 ]
Javorka, P [1 ]
Fox, A [1 ]
Wolter, M [1 ]
Kordos, P [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
来源：
ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of a carrier supply layer on the electrical properties of MSM diodes based on AlGaN/GaN HEMT layer structures is investigated. The voltage dependence of the Schottky contact capacitance allows the use of the device as varactor diode with C-MAX/C-MIN ratios tip to 17, tuneable by contact geometry. The carrier supply doping determines the sheet carrier density of the two-dimensional electron gas channel, which is responsible for the transition voltage and the series resistance of the MSM diode. A device based on the highest doped layer structure shows a cutoff frequency as high as 65 GHz.
引用
收藏
页码：151 / 154
页数：4
相关论文
共 50 条
  • [1] MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application
    Marso, M
    Bernát, J
    Wolter, M
    Javorka, P
    Fox, A
    Kordos, P
    ASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 295 - 298
  • [2] Varactor diodes based on an AlGaN/GaN HEMT layer structure
    Marso, M
    Wolter, M
    Bernát, J
    Javorka, P
    Fox, A
    Kordos, P
    EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 37 - 41
  • [3] Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
    Marso, M.
    Fox, A.
    Heidelberger, G.
    Kordos, P.
    Lueth, H.
    ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, : 229 - 232
  • [4] Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
    Marso, M.
    Fox, A.
    Heidelberger, G.
    Kordos, P.
    Lueth, H.
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) : 945 - 947
  • [5] An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure
    Marso, M.
    Fox, A.
    Heidelberger, G.
    Bernat, J.
    Lueth, H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2261 - 2264
  • [6] Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
    Ochalski, TJ
    Grzegorczyk, A
    Rudzinski, M
    Larsen, PK
    Holtz, PO
    Bergman, P
    Paskov, PP
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (07): : 1300 - 1307
  • [7] AlGaN/GaN varactor diode for integration in HEMT circuits
    Marso, M
    Wolter, M
    Javorka, P
    Fox, A
    Kordos, P
    ELECTRONICS LETTERS, 2001, 37 (24) : 1476 - 1478
  • [8] Characterisation and analytical modelling of GaN HEMT-based varactor diodes
    Hamdoun, A.
    Roy, L.
    Himdi, M.
    Lafond, O.
    ELECTRONICS LETTERS, 2015, 51 (23) : 1930 - 1931
  • [9] Optical study of AlGaN/GaN based HEMT structures
    Ochalski, TJ
    Grzegorczyk, A
    Rudzinski, M
    Larsen, PK
    Kowalczyk, E
    Holtz, PO
    Bergman, P
    Paskov, PP
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2791 - 2795
  • [10] Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
    S. T. Bradley
    A. P. Young
    L. J. Brillson
    M. J. Murphy
    W. J. Schaff
    Journal of Electronic Materials, 2001, 30 : 123 - 128
12345