Scaling behavior of large scale growth of the microcrystalline silicon films

An important concern in the deposition of thin microcrystalline silicon (mu c-Si) films is to obtain the dynamic scaling exponent. We have analyzed the dynamic scaling exponent of mu c-Si thin films on different substrates using surface profilometry. The surface roughness of the thin microcrystalline silicon films and the different substrates both are shown and compared. The results reveals that the abnormal dynamic exponent of thin film on the stainless steel substrate account for shadow effect, and the dynamic exponents of thin films on the c-Si substrate and the glass substrate imply the change of growth mechanism with distance from center.