Scaling behavior of large scale growth of the microcrystalline silicon films

被引：0

作者：

Zhao, W. ^{[1
,2
]}

Chen, J. ^{[1
]}

Song, S. ^{[2
]}

Xu, L. ^{[2
]}

Hong, T. ^{[2
]}

Zhang, X. ^{[2
]}

机构：

[1] S China Normal Univ, Lab Quantum Informat Technol, Sch Phys & Telecommun Engn, Guangzhou 510006, Guangdong, Peoples R China

[2] S China Agr Univ, Coll Engn, Guangzhou 510642, Guangdong, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2011年 / 5卷 / 3-4期

关键词：

Microcrystalline Silicon; scaling; Surfaces and interfaces; Growth mechanism; AMORPHOUS-SILICON;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An important concern in the deposition of thin microcrystalline silicon (mu c-Si) films is to obtain the dynamic scaling exponent. We have analyzed the dynamic scaling exponent of mu c-Si thin films on different substrates using surface profilometry. The surface roughness of the thin microcrystalline silicon films and the different substrates both are shown and compared. The results reveals that the abnormal dynamic exponent of thin film on the stainless steel substrate account for shadow effect, and the dynamic exponents of thin films on the c-Si substrate and the glass substrate imply the change of growth mechanism with distance from center.

引用

页码：231 / 234

页数：4

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