An improved gate current model of GaAs FET's for nonlinear circuit simulation

被引：0
|
作者：
Watanabe, S
Oda, Y
机构：
[1] Toshiba Corp, Kawasaki-shi, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1996年 / E79C卷 / 05期
关键词：
GaAs; FET; microwave; equivalent circuit; modeling; simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved gate current model of GaAs FET's is presented. A conventional gate current model has been determined only by the forward current and the reverse breakdown characteristics. Consequently, the model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standard elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circuits.
引用
收藏
页码：606 / 610
页数：5
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