Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

被引：158
|
作者：
Kondow, M
Nakatsuka, S
Kitatani, T
Yazawa, Y
Okai, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期
关键词：
GaInNAs; long-wavelength-range laser diode; room temperature pulsed operation; high-temperature performance;
D O I：
10.1143/JJAP.35.5711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm(2), and the lasing wavelength was about 1.2 mu m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127K in the temperature range from 25 to 85 degrees C.
引用
收藏
页码：5711 / 5713
页数：3
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