Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance

被引：158
|
作者：
Kondow, M
Nakatsuka, S
Kitatani, T
Yazawa, Y
Okai, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期
关键词：
GaInNAs; long-wavelength-range laser diode; room temperature pulsed operation; high-temperature performance;
D O I：
10.1143/JJAP.35.5711
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm(2), and the lasing wavelength was about 1.2 mu m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127K in the temperature range from 25 to 85 degrees C.
引用
收藏
页码：5711 / 5713
页数：3
相关论文
共 50 条
  • [21] PULSED, ROOM-TEMPERATURE OPERATION OF A TUNABLE NACL COLOR-CENTER LASER
    CULPEPPER, CF
    CARRIG, TJ
    PINTO, JF
    GEORGIOU, E
    POLLOCK, CR
    OPTICS LETTERS, 1987, 12 (11) : 882 - 884
  • [22] ROOM-TEMPERATURE AND HIGH-TEMPERATURE PHASES OF SODIUM NIOBATE
    LEFKOWITZ, I
    MEGAW, HD
    ACTA CRYSTALLOGRAPHICA, 1963, 16 (13): : A188 - &
  • [23] Room-temperature continuous-wave operation of blue-green laser diodes
    Kim, MD
    Park, HS
    Kim, BJ
    Ji, JK
    Oh, ES
    Lee, SD
    Kim, TI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1996, 29 (03) : 403 - 404
  • [24] Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 μm
    Gupta, JA
    Barrios, PJ
    Zhang, X
    Lapointe, J
    Poitras, D
    Pakulski, G
    Wu, X
    Delâge, A
    ELECTRONICS LETTERS, 2005, 41 (19) : 1060 - 1062
  • [25] ROOM-TEMPERATURE CW LASER-DIODES - OVERVIEW
    KRESSEL, H
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (03) : 291 - 291
  • [26] RECENT TRENDS IN ROOM-TEMPERATURE LASER-DIODES
    KRESSEL, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (06) : 532 - &
  • [27] IMPROVED ROOM-TEMPERATURE LASER PERFORMANCE IN GAAS DIFFUSED-JUNCTION DIODES
    CARLSON, RO
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 661 - &
  • [28] Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
    Sato, S
    Satoh, S
    ELECTRONICS LETTERS, 1998, 34 (15) : 1495 - 1497
  • [29] ROOM-TEMPERATURE PULSED OPERATION OF 498NM LASER WITH ZNMGSSE CLADDING LAYERS
    ITOH, S
    OKUYAMA, H
    MATSUMOTO, S
    NAKAYAMA, N
    OHATA, T
    MIYAJIMA, T
    ISHIBASHI, A
    AKIMOTO, K
    ELECTRONICS LETTERS, 1993, 29 (09) : 766 - 768
  • [30] Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode
    Nakamura, F
    Kobayashi, T
    Tojo, T
    Asatsuma, T
    Naganuma, K
    Kawai, H
    Ikeda, M
    ELECTRONICS LETTERS, 1998, 34 (11) : 1105 - 1107
12345