4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001)

被引：37
|
作者：
Miyake, Hiroki [1 ]
Kimoto, Tsunenobu [1 ,2 ]
Suda, Jun [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期
基金：
日本学术振兴会;
关键词：
Bipolar junction transistor (BJT); current gain; lifetime; silicon carbide (SiC); surface passivation; (0001) Si face; (000(1)over-bar) C face;
D O I：
10.1109/LED.2011.2142291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate 4H-SiC bipolar junction transistors (BJTs) with record current gains. An improved current gain was achieved by utilizing optimized device geometry and continuous epitaxial growth of the emitter-base junction, combined with an intentional deep-level-reduction process based on thermal oxidation to improve the lifetime in p-SiC base. A current gain (beta) of 257 was achieved for 4H-SiC BJTs fabricated on the (0001) Si face. A gain of 257 is twice as large as the previous record gain. We also demonstrate BJTs on the (000 (1) over bar) C face that showed the highest beta of 335 among the SiC BJTs ever reported.
引用
收藏
页码：841 / 843
页数：3
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