4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001)

被引：37

作者：

Miyake, Hiroki ^{[1
]}

Kimoto, Tsunenobu ^{[1
,2
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

基金：

日本学术振兴会;

关键词：

Bipolar junction transistor (BJT); current gain; lifetime; silicon carbide (SiC); surface passivation; (0001) Si face; (000(1)over-bar) C face;

D O I：

10.1109/LED.2011.2142291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate 4H-SiC bipolar junction transistors (BJTs) with record current gains. An improved current gain was achieved by utilizing optimized device geometry and continuous epitaxial growth of the emitter-base junction, combined with an intentional deep-level-reduction process based on thermal oxidation to improve the lifetime in p-SiC base. A current gain (beta) of 257 was achieved for 4H-SiC BJTs fabricated on the (0001) Si face. A gain of 257 is twice as large as the previous record gain. We also demonstrate BJTs on the (000 (1) over bar) C face that showed the highest beta of 335 among the SiC BJTs ever reported.

引用

页码：841 / 843

页数：3

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