Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

被引：0
|
作者：
Zhu, Fang [1 ]
Luo, Guo Qing [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES | 2021年 / 13卷 / 09期
关键词：
CMOS; dual-band; dual-mode; mixer; millimeter-wave; switchable; CONVERTER;
D O I：
10.1017/S1759078721000155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of -0.5 +/- 1.5 dB from 37 to 50 GHz and 2.5 +/- 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.
引用
收藏
页码：875 / 879
页数：5
相关论文
共 50 条
  • [31] 60 GHz Up-Conversion Mixer with Wide IF Bandwidth using Transformer-based Negative Feedback in 65-nm CMOS
    Lee, Joong Geun
    Park, Geon Ho
    Byeon, Chul Woo
    Park, Chul Soon
    PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 732 - 734
  • [32] A 5/10 Gb/s Dual-Mode NRZ/PAM4 CDR in 65-nm CMOS
    Ma, Ruichang
    Cao, Mengdi
    Chen, Guopei
    Duan, Luqiang
    Song, Zheng
    Chi, Baoyong
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [33] A 6-Gbps dual-mode digital clock and data recovery circuit in a 65-nm CMOS technology
    Jeon, Min-Ki
    Yoo, Changsik
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2015, 85 (01) : 209 - 215
  • [34] A 6-Gbps dual-mode digital clock and data recovery circuit in a 65-nm CMOS technology
    Min-Ki Jeon
    Changsik Yoo
    Analog Integrated Circuits and Signal Processing, 2015, 85 : 209 - 215
  • [35] A Dual-Mode Wideband+17.7-dBm 60-GHz Power Amplifier in 65-nm CMOS
    Farahabadi, Payam Masoumi
    Moez, Kambiz
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2017, 7 (12): : 1998 - 2007
  • [36] A Millimeter-Wave (24/31-GHz) Dual-Band Switchable Harmonic Receiver in 0.18-μm SiGe Process
    El-Nozahi, Mohamed
    Amer, Ahmed
    Sanchez-Sinencio, Edgar
    Entesari, Kamran
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (11) : 2717 - 2730
  • [37] Frequency Reconfigurable Dual-Band CMOS Power Amplifier for Millimeter-Wave 5G Communications
    Lee, Jaehun
    Paek, Ji-Seon
    Hong, Songcheol
    2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, : 846 - 849
  • [38] A 39-GHz High Image-Rejection Up-Conversion Mixer in 65-nm CMOS for 5G Communication
    Wang, Yiyang
    Duan, Haipeng
    He, Long
    Cheng, Depeng
    Wu, Xu
    Wang, Dongming
    Reynaert, Patrick
    Li, Lianming
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (02) : 491 - 495
  • [39] Development of UHF to 2.4GHz and 5.2GHz Dual Band Up-conversion CMOS Mixer
    Miyamoto, Ryoya
    Galal, A. I. A.
    Kanaya, Haruichi
    PROCEEDINGS OF THE 2016 IEEE 18TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2016, : 199 - 202
  • [40] Robust Low Power Dual-Mode GNSS Receiver in 65-nm CMOS for Multi-Radio SoC Integration
    Issakov, V.
    Doppke, H.
    Leyk, A.
    Villar, G. Lias
    Christ, V.
    Finn, G.
    Gu, Z.
    Kirchhoff, H. -G.
    Wang, Y.
    Tomasik, J. M.
    Devegowda, S.
    Hadjizada, K.
    Hammes, M.
    Kreienkamp, R.
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
12345